University Team

Vladislav Bougrov

Vladislav Bougrov

Biography

In 2004 Vladislav Bougrov became one of the founders of Optogan Oy. Until 2009, he developed the company as vice president of business development and intellectual property. After registration JSC «OptoGaN», he is responsible for creating an industrial complex for the production of LEDs in St. Petersburg, for the development of technology and intellectual property company. Vladislav Bougrov is the CEO of the plant «OptoGaN» in St. Petersburg and the research center «OptoGaN» in Finland. Together with Maxim Odnobljudov is the author of the key ideas and the company's patents.

Since March 2011 Vladislav Bougrov heads the project «Optogan. New technologies of light». Its aim is to integrate LED-structure-driver-optics on a single substrate and the developent of a new class of energy-saving compact multifunctional integrated lighting systems. Company «Optogan. New technologies of light» was created for this project, since 2011 is a member of Innovative center SKOLKOVO.

Since November 2011 Vladislav Bougrov is the Head of the base master faculty called «LED technologies» in ITMO University at the faculty of Optical Information System and Technologies. The faculty was established in the framework of the strategic partnership agreement of «OptoGaN» and ITMO University for a joint research and educational activities.

From 1994 to 2004 he was engaged in the development of the technology of LED devices based on nitrides of group III metals in the world's leading LED companies Cree (USA), TDI (USA) and ArimaOptoelectronics (Taiwan).

In 1996 Vladislav Bougrov graduated from the faculty of Optoelectronics in Saint Petersburg State Electrotechnical University (ETU). In 1999 he defended his thesis at Ioffe Physical-Technical Institute of the Russian Academy of Sciences (Ioffe Institute). During training, more than 10 times Vladislav Bougrov became the winner of Russian and international awards.

He is the author of more than 30 articles.

Among them, there are several fundamental works on LED technology based on gallium nitride. He has more than 50 patents and patent applications in the field of technology of LEDs based on nitrides of group III.

Scientific works:

[1] Bougrov VE, Zubrilov AS, «Computer simulation of optical confinement in III-V nitride double heterostructures», in Nakashima, S; Matsunami, H; Yoshida, S;  Harima, H Eds., SILICON CARBIDE AND RELATED MATERIALS 1995 SE INSTITUTE OF PHYSICS CONFERENCE SERIES, vol. 142, pp.1007-1010.

[2] Bougrov VE, Zubrilov AS, «Waveguide properties of heterostructures based on nitrides of gallium, aluminum and indium», «Physics and technics of semiconductors» 1997 (№1).

 [3] Bougrov, VE, Zubrilov, AS, «Optical confinement and threshold currents in III-V nitride heterostructures: Simulation», JOURNAL OF APPLIED PHYSICS, 1997, vol. 81, Issue 7, pp. 2952 -2956.

 [4] Rebane, YT; Shreter, YG; Yavich, BS; Bougrov, VE; Stepanov, SI Wang, WN, «Light emitting diode with charge asymmetric resonance tunneling», PHYSICA STATUS SOLIDI A-APPLIED RESEARCH,  2000, vol. 180, Issue 1, pp. 121-126.

[5] S. Stepanov, W.N. Wang, B.S. Yavich, V. Bougrov, Y.T. Rebane, Y.G. Shreter, «Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers», MRS Internet J. Nitride Semicond. Res. 6, 6 (2001).

[6] P.J. Wang, V.E. Bougrov, Y.T. Rebane, Y.G. Shreter, S.I. Stepanov, L. Tseng, B.S. Yavich, W.N. Wang. "III-nitride efficient LEDs", Proceedings SPIE 4445, 99-110 (2001).

[7] Y.T. Rebane, N.I. Bochkareva, V.E. Bougrov, D.V. Tarkhin, Y.G. Shreter, A.E. Girnov, S.I. Stepanov, W.N. Wang, P.T. Chang, andP.J. Wang. "Degradation and transient currents in III-Nitride LEDs", Proceedings of SPIE 4996, 113-124 (2003).

[8] T. Lang, M. Odnoblyudov, V. Bougrov, M. Sopanen, "MOCVD growth of GaN islands by multistep nucleation layer technique", Journal of Crystal Growth, 277, 64-71 (2005)

[9] V.E. Bougrov, M.A. Odnoblyudov, A.E. Romanov, T. Lang, and O.V. Konstantinov, "Threading dislocation density reduction in two-stage growth of GaN layers" Physica Status Solidi (a), 2006, vol. 2003, No 4, pp. R25-R27.

[10] T. Lang, M.A. Odnoblyudov, V.E. Bougrov, A.E. Romanov, S. Suihkonen, M. Sopanen, and H. Lipsanen, "Multistep method of threading dislocation density reduction in MOCVD grown GaNepilayers", Physica Status Solidi (a), 2006, vol. 203, No 10, pp. R76-R78.

[11] T. Lang, M. Odnoblyudov, V. Bougrov, S. Suihkonen, M. Sopanen, H. Lipsanen, "Morphology optimization of MOCVD grown GaN nucleation layers by the multistep technique", Journal of Crystal Growth, 292, 26-32 (2006).

[12] Suihkonen S, Lang T, Svensk O, Sormunen J, Torma PT, Sopanen M, Lipsanen H, Odnoblyudov MA, Bougrov VE,  "Control of the morphology of InGaN/GaN quantum wells grown by  metalorganic chemical vapor deposition", JOURNAL OF CRYSTAL GROWTH, 2007, vol. 300, Issue 2, pp. 324 – 329.

[13]  Sitnikova AA, Konnikov SG, Kirilenko DA, Mynbaeva MG, Odnoblyudov MA, Bougrov VE, Lang T, "TEM Study of the Structure of Gallium Nitride Epitaxial Films Grown on Substrates with Different Interface Morphologies", JOURNAL OF SURFACE INVESTIGATION-X-RAY SYNCHROTRON AND NEUTRON TECHNIQUES, 2007,  Vol. 1   Issue: 3   pp. 269-272.

[14] Lang, T; Odnoblyudov, MA; Bougrov, VE; Suihkonen, S; Svensk, O; Torma, PT; Sopanen, M; Lipsanen, H, "Reduction of threading dislocation density in Al0.12Ga0.88N epilayers by a multistep technique",  JOURNAL OF CRYSTAL GROWTH,  2007, vol. 298, pp. 276-280.

[15] Suihkonen S, Svensk O, Lang T, Lipsanen H, Odnoblyudov MA,  Bougrov VE, "The effect of InGaNGaN MQW hydrogen treatment on threading dislocation optimization on GaN LED efficiency",  JOURNAL OF CRYSTAL GROWTH, 2007, vol. 298, pp. 740 – 743.

[16] Svensk, O; Suihkonen, S; Lang, T; Lipsanen, H; Sopanen, M; Odnoblyudov, MA; Bougrov, VE, "Effect of growth conditions on electrical properties of Mg-doped p-GaN", JOURNAL OF CRYSTAL GROWTH,  2007, vol. 298, pp. 811-814.

[17] A. Lankinen, T. Lang, S. Suihkonen, O. Svensk, A. Säynätjoki, T.O. Tuomi, P.J. McNally, M. Odnoblyudov, V. Bougrov, A.N. Danilewsky, P. Bergman and R. Simon, “Dislocations at the interface between sapphire and GaN”, Journal of Materials Science: Materials in Electronics, published online: 27 June 2007.

[18] Svensk, O; Torma, PT; Suihkonen, S; Ali, M; Lipsanen, H; Sopanen, M; Odnoblyudov, MA; Bougrov, VE,  "Enhanced electroluminescence in 405 nm InGaN/GaN LEDs by optimized electron blocking layer",  JOURNAL OF CRYSTAL GROWTH, 2008, vol. Issue 23, pp. 5154-5157.

[19] Torma, PT; Svensk, O; Ali, M; Suihkonen, S; Sopanen, M; Odnoblyudov, MA; Bougrov, VE, "Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs", JOURNAL OF CRYSTAL GROWTH, 2008, vol. 310, Issue, 23, pp. 5162-5165.

[20] Suihkonen, S; Svensk, O.; Torma, PT; Ali, M; Sopanen, M; Lipsanen, H; Odnoblyudov, MA;  Bougrov, VE, "MOVPE growth and characterization of InAlGaN films and InGaN/InAlGaN  MQW structures", JOURNAL OF CRYSTAL GROWTH,  2008, vol. 310, Issue 7-9, pp. 1777- 1780.

[21] Torma, PT; Ali, M; Svensk, O;   Sintonen, S; Kostamo, P; Sopanen, M; Lipsanen, H Odnoblyudov, MA; Bougrov, VE, "An investigation of structural properties of GaN films grown on    patterned sapphire substrates by MOVPE",  PHYSICA B-CONDENSED MATTER,2009, vol. 404, Issue 23-24,pp. 4911-4915.

[22] Torma, PT; Svensk, O; Ali, M; Suihkonen, S; Sopanen, M; Odnoblyudov, MA; Bougrov, VE, "Maskless roughening of sapphire substrates for enhanced light extraction of nitride based blue LEDs", SOLID-STATE ELECTRONICS, 2009, vol.53, Issue 2, pp. 166- 169.

[23] V.E. Bougrov, A.R. Kovsh, M.A. Odnoblyudov, and A.E.Romanov, "High quality GaN substrates for modern LED technology", LED Professional Review, 2010, Issue 18,  pp. 42-49.

[24] Torma, PT; Ali, M; Svensk, O; Suihkonen, S; Sopanen, M; Lipsanen, H; Mulot, M; Odnoblyudov, MA; Bougrov, VE, "InGaN-based 405 nm near-ultraviolet light emitting diodes on pillar patterned sapphire substrates", CRYSTENGCOMM , 2010, vol. 12, Issue 10, pp.3152-3156.

[25] M. Ali, A.E. Romanov, S. Suihkonen, O. Svensk, P.T. Torma, M. Sopanen, H. Lipsanen, M.A. Odnoblyudov, and V.E. Bougrov, "Void shape control in GaN re-grown on hexagonally patterned, mask-less GaN", Journal of Crystal Growth, 2011, vol.315. No 1, pp. 188-191.

[26] S.S. Suslov, V.E. Bougrov, M.A. Odnoblyudov, A.E. Romanov, "Modelling and optimization of electric current spreading in III-nitride LEDs", Physica Status Solidi (c), 2012, published on line.

[27] I.N. Ivukin, V.E. Bougrov, M.A. Odnoblyudov, A.E. Romanov, "Reduction of mechanical stresses in GaN/sapphire templates via formation of regular porous structure", Physica Status Solidi (c), 2012, published on line.

[28]  M. Ali, A.E. Romanov, S. Suihkonen, O. Svensk, S. Sintonen, M. Sopanen, H. Lipsanen, V.N. Nevedomsky, N.A. Bert, M.A. Odnoblyudov, V.E. Bougrov, "Analysis of threading  dislocations in void shape controlled GaN re-grown on hexagonally patterned mask-less GaN", Journal of Crystal Growth, 2012, published on line.

[29] M. Ali, O. Svensk, M. Kruse, S. Suihkonen, A.E. Romanov, M. Sopanen, H. Lipsanen, M.A. Odnoblyudov, V.E. Bougrov "Optimization of embedded voids for enhancing the light output of near UV InGaN/GaN LEDs", 2012, in preparation.

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