University Team

Vladislav Bougrov

Vladislav Bougrov

Biography

Having graduated with honors from St. Petersburg State Electrotechnical University’s Faculty of Optoelectronics in 1996, Vladislav Bougrov went on to work on his PhD thesis, which he defended at the Ioffe Physical-Technical Institute of the Russian Academy of Sciences (Ioffe Institute) in 1999. He then continued his research in the field of light emitting diodes (LEDs), becoming a DsC in 2013. Prof. Bougrov’s topical work was recognized by a Russian Federation Government Award.

In addition to his impressive research record, Dr. Bougrov has an extensive experience of working in the field. From 1994 to 2004, he was involved in the development of complex LED devices in the world's leading LED companies: Cree (USA), TDI (USA) and Arima Optoelectronics (Taiwan). In 2004, Vladislav Bougrov co-founded Optogan Oy, which became one of Russia’s largest LEDs manufacturers. As a result of his long-standing work for the company, he penned many of the company’s key ideas and patents and succeeded in creating a world-class industrial complex for LEDs production in St. Petersburg. As of now, Prof. Bougrov combines his teaching and research activities with being the CEO of the OptoGaN plant in St. Petersburg and the OptoGaN research center in Finland.

From March 2011, Prof. Bougrov has been developing a hi-tech project ‘Optogan. New technologies of light’, which is aimed at integrating LED-structure-driver-optics to single substrates and developing a new class of energy-saving multifunctional lighting systems. The project is now part of the SKOLKOVO Innovation Center.

Dr. Bougrov is the author of more than 30 articles, including several fundamental works on gallium nitride-based LED technologies. He has over 50 patents and patent applications in the field of LEDs operating on third-group nitrides.

Publications:

[01] Bougrov V.E., Zubrilov A.S., Computer simulation of optical confinement in III-V nitride double heterostructures, Inst. Phys. Conf. Ser., Vol. 142, Is. 6, 1996, pp. 1007-1010

[02] Bougrov V.E., Zubrilov A.S., Optical confinement and threshold currents in III-V nitride heterostructures: Simulation, J. Appl. Phys., Vol. 81, Is. 7, 1997, pp. 2952-2956

[03] Sukhoveyev V., Ivantsov V., Zubrilov A., Nikolaev V., Nikitina I., Bougrov V., Tsvetkov D., Dmitriev V., Crystal structure and optical properties of bulk GaN crystals grown from a melt at reduced pressure, Mater. Sci. Forum, Vols. 264-268, 1998, pp. 1331–1334

[04] Rebane Y.T., Shreter Y.G., Yavich B.S., Bougrov V.E., Stepanov S.I., Wang W.N., Light emitting diode with charge asymmetric resonance tunneling, Physica Status Solidi (a), Vol. 180, Is. 1, 2000, pp. 121-126

[05] Stepanov S., Wang W.N., Yavich B.S., Bougrov V., Rebane Y.T., Shreter Y.G., Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers, MRS Internet J. Nitride Semicond. Res., Vol. 6, Art. 6, 2001

[06] Wang P.J., Bougrov V.E., Rebane Y.T., Shreter Y.G., Stepanov S.I., Tseng L., Yavich B.S., Wang W.N., III-nitride efficient LEDs, Proceedings of SPIE, Vol. 4445, 2001, pp. 99-110

[07] Bougrov V., Levinshtein M., Rumyantsev S.L., Zubrilov A., Chapter 1 (Gallium Nitride) in: "Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe", John Wiley & Sons, Inc. NY-Chichester-Weinheim-Brisbane-Singapore-Toronto, 2002

[08] Rebane Y.T., Bochkareva N.I., Bougrov V.E., Tarkhin D.V., Shreter Y.G., Girnov A.E., Stepanov S.I., Wang W.N., Chang P.T., Wang P.J., Degradation and transient currents in III-Nitride LEDs, Proceedings of SPIE, Vol. 4996, 2003, pp. 113-124

[09] Lang T., Odnoblyudov M., Bougrov V., Sopanen M., MOCVD growth of GaN islands by multistep nucleation layer technique, Journal of Crystal Growth, Vol. 277, Is. 1–4, 2005, pp. 64-71

[10] Bougrov V.E., Odnoblyudov M.A., Romanov A.E., Lang T., Konstantinov O.V., Threading dislocation density reduction in two-stage growth of GaN layers, Physica Status Solidi (a), Vol. 203, Is. 4, 2006, pp. R25-R27

[11] Lang T., Odnoblyudov M.A., Bougrov V.E., Romanov A.E., Suihkonen S., Sopanen M., Lipsanen H., Multistep method of threading dislocation density reduction in MOCVD grown GaN epilayers, Physica Status Solidi (a), Vol. 203, Is. 10, 2006, pp. R76-R78

[12] Lang T., Odnoblyudov M., Bougrov V., Suihkonen S., Sopanen M., Lipsanen H., Morphology optimization of MOCVD grown GaN nucleation layers by the multistep technique, Journal of Crystal Growth, Vol. 292, Is. 1, 2006, pp. 26-32

[13] Suihkonen S., Lang T., Svensk O., Sormunen J., Törmä P.T., Sopanen M., Lipsanen H., Odnoblyudov M.A., Bougrov V.E., Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition, Journal of Crystal Growth, Vol. 300, Is. 2, 2007, pp. 324–329

[14] Lang T., Odnoblyudov M.A., Bougrov V.E., Suihkonen S., Svensk O., Törmä P.T, Sopanen M, Lipsanen H., Reduction of threading dislocation density in Al0.12Ga0.88N epilayers by a multistep technique, Journal of Crystal Growth, Vol. 298, 2007, pp. 276-280

[15] Suihkonen S., Svensk O., Lang T., Lipsanen H., Odnoblyudov M.A., Bougrov V.E., The effect of InGaNGaN MQW hydrogen treatment on threading dislocation optimization on GaN LED efficiency, Journal of Crystal Growth, Vol. 298, 2007, pp. 740–743

[16] Svensk O., Suihkonen S., Lang T., Lipsanen H., Sopanen M., Odnoblyudov M.A., Bougrov V.E., Effect of growth conditions on electrical properties of Mg-doped p-GaN, Journal of Crystal Growth, Vol. 298, 2007, pp. 811-814

[17] Lankinen A., Lang T., Suihkonen S., Svensk O., Säynätjoki A., Tuomi T.O., McNally P.J., Odnoblyudov M., Bougrov V., Danilewsky A.N., Bergman P., Simon R., Dislocations at the interface between sapphire and GaN, J. Mater. Sci.: Mater. Electron., Vol. 19, Is. 2, 2008, pp. 143-148

[18] Svensk O., Törmä P.T., Suihkonen S., Ali M., Lipsanen H., Sopanen M., Odnoblyudov M.A., Bougrov V.E., Enhanced electroluminescence in 405 nm InGaN/GaN LEDs by optimized electron blocking layer, Journal of Crystal Growth, Vol. 310, Is. 23, 2008, pp. 5154-5157

[19] Törmä P.T., Svensk O., Ali M., Suihkonen S., Sopanen M., Odnoblyudov M.A., Bougrov V.E., Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs, Journal of Crystal Growth, Vol. 310, Is. 23, 2008, pp. 5162-5165

[20] Suihkonen S., Svensk O., Törmä P.T., Ali M., Sopanen M., Lipsanen H., Odnoblyudov M.A., Bougrov V.E., MOVPE growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures, Journal of Crystal Growth, Vol. 310, Is. 7-9, 2008, pp. 1777-1780

[21] Törmä P.T., Ali M., Svensk O., Sintonen S., Kostamo P., Sopanen M., Lipsanen H., Odnoblyudov M.A., Bougrov V.E., An investigation of structural properties of GaN films grown on patterned sapphire substrates by MOVPE, Physica B: Cond. Matter, Vol. 404, Is. 23-24, 2009, pp. 4911-4915

[22] Törmä P.T., Svensk O., Ali M., Suihkonen S., Sopanen M., Odnoblyudov M.A., Bougrov V.E., Maskless roughening of sapphire substrates for enhanced light extraction of nitride based blue LEDs, Sol. State Electron., Vol. 53, Is. 2, 2009, pp. 166-169

[23] Bougrov V.E., Kovsh A.R., Odnoblyudov M.A., Romanov A.E., High quality GaN substrates for modern LED technology, LED Professional Review, Is. 18, 2010, pp. 42-49

[24] Törmä P.T., Ali M., Svensk O., Suihkonen S., Sopanen M., Lipsanen H., Mulot M., Odnoblyudov M.A., Bougrov V.E., InGaN-based 405 nm near-ultraviolet light emitting diodes on pillar patterned sapphire substrates, CrystEngComm, Vol. 12, Is. 10, 2010, pp. 3152-3156

[25] Ali M., Romanov A.E., Suihkonen S., Svensk O., Törmä P.T., Sopanen M., Lipsanen H., Odnoblyudov M.A., Bougrov V.E., Void shape control in GaN re-grown on hexagonally patterned, mask-less GaN, Journal of Crystal Growth, Vol. 315, Is. 1, 2011, pp. 188-191

[26] Ivukin I.N., Bougrov V.E., Odnoblyudov M.A., Romanov A.E., Reduction of mechanical stresses in GaN/sapphire templates via formation of regular porous structure, Physica Status Solidi (c), Vol. 9, Is. 3-4, 2012, pp.1057-1059

[27] Suslov S.S., Bougrov V.E., Odnoblyudov M.A., Romanov A.E., Modelling and optimization of electric current spreading in III-nitride LEDs, Physica Status Solidi (c), Vol. 9, Is. 3-4, 2012, pp. 1105-1108

[28] Ali M., Romanov A.E., Suihkonen S., Svensk O., Sintonen S., Sopanen M., Lipsanen H., Nevedomsky V.N., Bert N.A., Odnoblyudov M.A., Bougrov V.E., Analysis of threading dislocations in void shape controlled GaN re-grown on hexagonally patterned mask-less GaN, Journal of Crystal Growth, Vol. 344, Is. 1, 2012, pp. 59-64

[29] Ali M., Svensk O., Riuttanen L., Kruse M., Suihkonen S., Romanov A.E., Törmä P.T., Sopanen M., Lipsanen H., Odnoblyudov M.A., Bougrov V.E., Enhancement of near-UV GaN LED light extraction efficiency by GaN/sapphire template patterning, Semiconductor Science and Technology, Vol. 27, Is. 8, Art. 082002, 2012, pp. 1-5

[30] S.N. Lipnitskaya, V. E. Bugrov, A. R. Kovsh, M. A. Odnoblyudov, K. D. Mynbaev, L. A. Nikulina, and A. E. Romanov, Increasing the light-output efficiency from chip-on-board LED modules, J. Opt. Technol. Vol. 80, Is. 12, 2013, pp. 751-755

[31] Vinogradova, K.A.,  Nikulina, L.A., Mynbaev, K.D.,  Kovsh, A.R., Odnoblyudov, M.A., Nikolaev, V.I.,  Bougrov, V.E. Efficiency comparison of light emitting diodes based on monochromatic chips and chips with phosphor, Materials Physics and Mechanics, Volume 18, Issue 2, 2013, Pages 135-142

[32] Vinogradova, K.A.,  Nikulina, L.A., Braslavskii, S.S.,  Solovieva, E.A., Mynbaev, K.D., Nikolaev, V.I.,  Romanov, A.E., Bougrov, V.E. Temperature stability of colored led elements, Materials Physics and Mechanics, Volume 18, Issue 2, 2013, Pages 143-147

[33] Vinogradova, K.A.,  Lipnitskaya, S.N., Mynbaev, K.D.,  Bougrov, V.E., Kovsh, A.R., Odnoblyudov, M.A.,  Nikolaev, V.I., Romanov, A.E. Optimization of light extraction from power led chip-on-board modules emitting in ultraviolet range of spectrum, Materials Physics and Mechanics, Volume 17, Issue 2, 2013, Pages 111-120.

[34] Artemiev, D.,  Bougrov, V., Odnoblyudov, M.,  Romanov, A. Mechanical stress control in GaN films on sapphire substrate via patterned nanocolumn interlayer formation, Physica Status Solidi (C) Current Topics in Solid State Physics, Volume 10, Issue 1, January 2013, Pages 89-92

[35] V.I. Nikolaev, A.A. Golovatenko, M.G. Mynbaeva, I.P. Nikitina, N.V. Seredova, A.I. Pechnikov, V.E. Bougrov, M.A.  Odnobludov, Effect of nano–column properties on self-separation of thick GaN layers grown by HVPE, Physica status solidi С, Vol. 11, Is. 3-4, 2014, pp.502-504

[36] D.M. Artemiev, T.S. Orlova, V.E. Bougrov, M.A. Odnoblyudov, A.E. Romanov, Reaction-kinetics model for threading dislocation density reduction in GaN porous layer, AIP Conference Proceedings, Vol. 1583, 2014, pp. 310-314

[37] M.A. Shvaleva, L.A. Nikulina, V.A. Aseev, K.D. Mynbaev, V.E. Bougrov, A.R. Kovsh, M.A. Odnoblyudov, N.V. Nikonorov, A.E. Romanov, Ce3+:YAG Doped Glass-Ceramics For Energy-Saving White Light-Emitting Diode, Optical Review, Vol. 21, Is. 5, 2014, pp. 683-686

[38] S. Lipnitskaya, K. Mynbaev, L. Nikulina, V. Kramnik, V. Bougrov, A. Kovsh, M. Odnoblyudov, A. Romanov, Investigation of light extraction from light emitting module chip-on-board, Optical Review, 2014, Vol. 21, Is. 5, pp. 655-658

[39] Kolodeznyi, E.S.,  Ivukin, I.N., Serebryakova, V.S.,  Bougrov, V.E., Romanov, A.E. Thermal analysis of phosphor containing silicone layer in high power LEDs, Materials Physics and Mechanics, Volume 21, Issue 3, 2014, Pages 283-287

[40] Sharofidinov,  Sh., Golovatenko, A.A.,  Nikitina, I.P., Seredova, N.V.,  Mynbaeva, M.G., Bougrov, V.E., Odnobludov, M.A.,  Stepanov, S.I.d, Nikolaev, V.I. Thick GaN layers on silicon substrate, Materials Physics and Mechanics, Volume 22, Issue 1, 2014, Pages 53-58

[41] Aseev, V.A.,  Tuzova, J.V., Kolobkova, E.V.,  Nekrasova, Y.A., Nikonorov, N.V.,  Shvaleva, M.A., Romanov, A.E., Bougrov, V.E. Inorganic composite «phosphor in glass» based on highly refractive LED-silicate matrix for white LEDs, Materials Physics and Mechanics, Volume 21, Issue 3, 2014, Pages 242-247

[42] A.E. Romanov, A.L. Kolesnikova, T.S. Orlova, I. Hussainova, V.E. Bougrov, R.Z. Valiev, Non-equilibrium grain boundaries with excess energy in graphene, Carbon, 2015, vol. 81, No 1, pp. 223-231

[43] V.I. Nikolaev, A.I.Pechnikov, V.N. Maslov, A.A.Golovatenko, N.K. Zhumashev, V.M. Krymov, S.I. Stepanov, V.E. Bougrov, A.E. Romanov, GaN growth on beta-Gа2O3 substrate by HPVE, Физика и механика материалов, 2015, Т. 22, В. 1, стр. 59-63

[44] D.M. Artemiev, T.S. Orlova, V.E. Bougrov, M.A. Odnoblyudov, A. E. Romanov Modeling of threading dislocation density reduction in III-nitride porous layers, Journal of Electronic Materials, 2015, vol. 44, issue 5, pp. 1287-1292

[45] V.N. Maslov, V.I. Nikolaev, V.M. Krymov, V.E. Bougrov, A.E. Romanov, Deposition of β-Ga2O3 layers by sublimation on sapphire substrates of different orientations, Physics of the Solid State, 2015, Vol. 57, Is. 7, pp. 1342-1346

[46] M.A. Shvaleva, Yu.V. Tuzova, A.E. Romanov, V.A. Aseev, N.V. Nikonorov, K.D. Mynbaev, and V.E. Bugrov, Optical and thermal properties of phosphors based on lead-silicate glass for high-power white LEDs, Technical Physics, Letters, 2015, Vol. 41, Is. 11, pp. 1041–1043

[47] M.A. Shvaleva, E. Shulga, I. Kink, K.D. Mynbaev, V.E. Bougrov, A.E. Romanov, Na2SiO3 liquid glass–based phosphor material for white LEDs, Physica Status Solidi (a), 2015, Vol. 212, Is. 12, pp. 2964-2967

[48] A.Y. Egorov, L.Y.Karachinsky, I.I. Novikov, A.V. Babichev, V.N. Nevedomskiy, V.E. Bugrov, Design concepts of monolithic metamorphic vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range, Semiconductors 2015, V. 49. Is. 11, pp. 1522-1526

[49] Rozhkov M.A., Kolodeznyi E.S., Smirnov A.M., Bougrov V.E., Romanov A.E. Comparison of characteristics of schottky diodes based on β-GA2O3 and other wide bandgap semiconductors, Materials Physics and Mechanics, 24(2), 2015, p. 194-200

[50] Novikov I.I., Karachinsky L.Y., Kolodeznyi E.S., Bougrov V.E., Kurochkin A.S., Gladyshev A.G., Babichev A.V., Gadzhiev I.M., Buyalo M.S., Zadiranov Y.M., Usikova A.A., Shernyakov Y.M., Savelyev A.V., Nyapshaev I.A., Egorov A.Y. On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm, Semiconductors, 50(10), 2016, p. 1412-1415

[51] V.I. Nikolaev, A.I. Pechnikov, S.I. Stepanov, V.M. Krymov, V.N. Maslov, V.E. Bougrov, A.E. Romanov, HVPE growth of GaN layers on cleaved β-Ga2O3 substrates, Key Engineering Materials, 2016, vol. 674, pp. 302-307

[52] Sh.Sharofidinov, V.I. Nikolaev, A.N. Smirnov, A.V. Chikiryaka, I.P. Nikitina, M.A. Odnoblyudov, V.E. Bugrov, A.E. Romanov, On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy, Semiconductors, 2016, vol. 50, Is. 4, pp. 541-544

[53] S.I. Stepanov, V.I. Nikolaev, V.E. Bougrov, A.E. Romanov, Gallium oxide: properties and applications – a review, Reviews on Advanced Materials Science, 2016, Vol.44, Is. 1, pp.63-86

[54] A.M. Smirnov, E. Young, J.S. Speck, V.E. Bougrov, A.E. Romanov, Critical conditions for misfit dislocation nucleation via nonbasal slip in semipolar III-nitride layers,  APL Materials, 2016, Vol. 4, Is. 1, 016105(1-8)

[55] V.I. Nikolaev, A.I. Pechnikov, S.I. Stepanov, I.P.Nikitina, A.N. Smirnov, A.V. Chikiryaka, S.S.Sharofidinov, V.E. Bougrov, A.E. Romanov, Epitaxial growth of (-201) β-Ga2O3 on (0001) sapphire substrates by halide vapour phase epitaxy, Materials Science in Semiconductor Processing, 2016, Vol. 47, Is. 1, pp. 16-19

[56] M.G. Mynbaeva,  A.V. Kremleva, D.A. Kirilenko, A.A. Sitnikova, A.I. Pechnikov, K.D. Mynbaev, V.I. Nikolaev, V.E. Bougrov, H. Lipsanen, and A.E. Romanov, TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern, Journal of Crystal Growth, 2016, Vol. 445, Is. 1, pp. 30-36

[57] I.S. Polukhin, G.A. Mikhailovskiy, D.A. Rybalko, Yu.V. Solov'ev, M.A. Odnoblyudov,  A.E. Gubenko, D.A. Livshits, A.N. Firsov, A.N. Kirsyaev, A.A. Efremov, V.E. Bougrov, Simulation operation regimes of passive mode-locked laser based on ingaalas/ingaas/inp heterostructures, Materials Physics and Mechanics, 2016, vol. 27, Is. 1. стр. 74-78

[58] V.I. Nikolaev, A.I. Pechnikov, S.I. Stepanov, S.S. Sharofidinov, A.A. Golovatenko, I.P. Nikitina, A.N. Smirnov, V.E. Bugrov, A.E. Romanov, P.N. Brunkov, D.A. Kirilenko, Chloride epitaxy of beta-Ga2O3 layers grown on c-sapphire substrates, Semiconductors, 2016, vol. 50, Is. 7, pp. 980-983

[59] A.Yu. Egorov, L.Ya. Karachinsky, I.I. Novikov, AV. Babichev, V.N. Nevedomskiy, V.E. Bugrov, Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range, Semiconductors, 2016, Vol. 50, Is. 5, pp. 612 – 615

[60] Mynbaeva M.G., Kremleva A.V., Kirilenko D.A., Sitnikova A.A., Pechnikov A.I., Mynbaev K.D., Nikolaev V.I., Bougrov V.E., Lipsanen H., Romanov A.E. TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern // Journal of Crystal Growth - 2016, Vol. 445, pp. 30-36

[61] Nikolaev V.I., Maslov V.N., Stepanov S.I., Pechnikov A.I., Krymov V.M., Nikitina I.P., Guzilova L.I., Bougrov V.E., Romanov A.E. Growth and characterization of beta-Ga2O3 crystals // Journal of Crystal Growth - 2016, pp. in press

[62] Nikolaev V.I., Pechnikov A.I., Stepanov S.I., Krymov V.M., Maslov V.N., Bougrov V.E., Romanov A.E. HVPE growth of GaN layers on cleaved beta-Ga2O3 substrates // Key Engineering Materials (Book Series) - 2016, vol. 674, pp. 302-307

[63] Nikolaev V.I., Pechnikov A.I., Stepanov S.I., Nikitina I.P., Smirnov A.N., Chikiryaka A.V., Sharofidinov S.S., Bougrov V.E., Romanov A.E. Epitaxial growth of (2-01) Beta-Ga2O3 on (0001) sapphire substrates by halide vapour phase epitaxy // Materials Science in Semiconductor Processing - 2016, Vol. 47, pp. 16-19

[64] Nikolaev V.I., Pechnikov A.I., Stepanov S.I., Sharofidinov S.S., Golovatenko A.A., Nikitina I.P., Smirnov A.N., Bugrov V.E., Romanov A.E., Brunkov P.N., Kirilenko D.A. Chloride epitaxy of beta-Ga2O3 layers grown on c-sapphire substrates // Semiconductors - 2016, Vol. 50, No. 7, pp. 980-983

[65] Polukhin I.S., Mikhailovskiy G.A., Rybalko D.A., Solov'Ev Y.V., Odnoblyudov M.A., Gubenko A.E., Livshits D.A., Firsov A.N., Kirsyaev A.N., Efremov A.A., Bougrov V.E. Simulation operation regimes of passive mode-locked laser based on ingaalas/ingaas/inp heterostructures // Физика и механика материалов = Materials Physics and Mechanics - 2016, Vol. 27, No. 1, pp. 74-78

[66] Rybalko D.A., Polukhin I.S., Solov'Ev Y.V., Mikhailovskiy G.A., Odnoblyudov M.A., Gubenko A.E., Livshits D.A., Firsov A.N., Kirsyaev A.N., Efremov A.A., Bougrov V.E. Model of mode-locked quantum-well semiconductor laser based on InGaAs/InGaAlAs/InP heterostructure // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012079

[67] Sharofidinov S.S., Nikolaev V.I., Smirnov A.N., Chikiryaka A.V., Nikitina I.P., Odnoblyudov M.A., Bougrov V.E., Romanov A.E. On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy // Semiconductors - 2016, Vol. 50, No. 4, pp. 541-544

[68] Smirnov A.M., Young E.C., Bougrov V.E., Speck J.S., Romanov A.E. Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures // APL Materials - 2016, Vol. 4, No. 1, pp. 016105

[69] Mynbaeva M.G., Pechnikov A.I., Smirnov A.N., Kirilenko D.A., Raufov S.Ch., Sitnikova A.A., Odnoblyudov M.A., Bougrov V.E., Mynbaev K.D., Nikolaev V.I., Romanov A.E. Optical properties of thick GaN layers grown with hydride vapor-phase epitaxy on structured substrates//Materials Physics and Mechanics, 2016, 29(1), с. 24-31

[70] Polukhin I.S., Mikhailovskiy G.A., Rybalko D.A., Solov'Ev Yu.V., Petukhov E.P., Odnoblyudov M.A., Kolodeznyi E.S., Mikhailov A.K., Bougrov V.E., Lipsanen H. Influence of absorber characteristics on operation regimes of passive mode locked lasers based on InGaAlAs/InGaAs/InP heterostructures// Materials Physics and Mechanics, 2016, 29(1), с. 71-75

[71] Shirshneva-Vaschenko E.V., Sosnin I.M., Nuryev R.K., Gladskikh I.A., Liashenko T.G., Bougrov V.E., Romanov A.E. Electrical and optical properties of transparent conducting ZnO:Al/AgNP multilayer films, Materials Physics and Mechanics, 2016, 29(2), с. 145-149

[72] Stepanov S.I., Nikolaev V.I., Bougrov V.E., Romanov A.E. Gallium Oxide: Properties and Applications - a Review // Reviews on Advanced Materials Science - 2016, Vol. 44, No. 1, pp. 63-86

[73] V.I. Nikolaev, V.N. Maslov, S.I. Stepanov, A.I. Pechnikov, V. Krymov, I.P. Nikitina, L.I. Guzilova, V.E. Bougrov, A.E. Romanov, "Growth and characterization of beta-Ga2O3 crystals", Journal of Crystal Growth, 2017, Vol. 457, No 1, pp. 132-136

[74] K.D. Mynbaev, N.L. Bazhenov, A.A. Semakova, M.P. Mikhailova, N.D. Stoyanov, S.S. Kizhaev, S.S. Molchanov, A.P. Astakhova, A.V. Chernyaev, H. Lipsanen, V.E. Bougrov, Electroluminescence of InAs/InAs(Sb)/InAsSbP LED Heterostructures in the Temperature Range 4.2–300 K, Semiconductors, 2017, Vol. 51, No. 2, pp. 239–244

[75] Bakholdin A., Bougrov Vladislav ., Ezhova K., Smirnova I., Voznesenskaya A. PBL approach for undergraduate studies in light engineering//Proceedings of SPIE, IET - 2017, Vol. 10452, pp. 104524A

[76] Shirshneva-Vaschenko E.V., Sokura L.A., Liashenko T.G., Podlesnov E., Bougrov V.E., Romanov A.E. Fabrication of p-type transparent oxide films with delafossite structure by sol-gel processing//Физика и механика материалов = Materials Physics and Mechanics, IET - 2017, Vol. 32, No. 3, pp. 288-292

[77] Nikolaev V.I., Maslov V.N., Stepanov S.I., Pechnikov A.I., Krymov V.M., Nikitina I.P., Guzilova L.I., Bougrov V.E., Romanov A.E. Growth and characterization of beta-Ga2O3 crystals//Journal of Crystal Growth, IET - 2017, Vol. 457, pp. 132–136    

[78] Mynbaev K.D., Bazhenov N.L., Semakova A.A., Chernyaev A.V., Kizhaev S.S., Stoyanov N.D., Bougrov V.E., Lipsanen H.K., Salikhov K. Spontaneous and stimulated emission in InAsSb-based LED heterostructures//Infrared Physics and Technology, IET - 2017, Vol. 85, pp. 246-25    

[79] Mynbaev K.D., Bazhenov N.L., Semakova A.A., Mikhailova M.P., Stoyanov N.D., Kizhaev S.S., Molchanov S.S., Astakhova A.P., Chernyaev A.V., Lipsanen H., Bougrov V.E. Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K//Semiconductors, IET - 2017, Vol. 51, No. 2, pp. 239-244    

[80] Kistankina M.A., Aseev V.A., Tuzova I.V., Mynbaev K.D., Bougrov V.E., Nikonorov N.V., Romanov A.E. Luminescent Phosphor-in-Glass Composite for White Light-Emitting Diodes//Journal of Optoelectronics Engineering, IET - 2017, Vol. 5, No. 1, pp. 7-9    

[81] Kolodeznyi E.S., Novikov I.I., Babichev A.V., Kurochkin A.S., Gladyshev A.G., Karachinsky L.Y., Gadzhiev I.M., Buyalo M.S., Usikova A.A., Egorov A.Y., Bougrov V.E. 1550 nm mode-locked semiconductor lasers for all-optical analog-to-digital conversion//AIP Conference Proceedings, IET - 2017, Vol. 1874, pp. 040019    

[82] Kolodeznyi E.S., Novikov I.I., Babichev A.V., Kurochkin A.S., Gladyshev A.G., Karachinsky L.Y., Gadzhiev I.M., Buyalo M.S., Usikova A.A., Ilynskaya N.D., Bougrov V.E., Egorov A.Y. Phosphorus-free mode-locked semiconductor laser with emission wavelength 1550 nm//Journal of Physics: Conference Series, IET - 2017, Vol. 917, No. 5, pp. 052021    

[83] Kolodeznyi E.S., Novikov I.I., Gladyshev A.G., Rochas S.S., Sharipo K.D., Karachinsky L.Y., Egorov A.Y., Bougrov V.E. Study of antireflection coatings for high-speed 1.3 -1.55 um InGaAs/InP PIN photodetector//Физика и механика материалов = Materials Physics and Mechanics, IET - 2017, Vol. 32, No. 2, pp. 194-197

[84] Novikov I.I., Babichev A.V., Bugrov V.E., Gladyshev A.G., Karachinsky L.Y., Kolodeznyi E.S., Kurochkin A.S., Savelyev A.V., Sokolovskii G.S., Egorov A.Y. The concept for realization of quantum-cascade lasers emitting at 7.5 Mum wavelength//Journal of Physics: Conference Series, IET - 2017, Vol. 929, No. 1, pp. 012082    

[85] Babichev A.V., Gladyshev A.G., Filimonov A.V., Nevedomskii V.M., Kurochkin A.S., Kolodeznyi E.S., Sokolovskii G.S., Bugrov V.E., Karachinsky L.Y., Novikov I.I., Bousseksou A., Egorov A.Y. Heterostructures for quantum-cascade lasers of the wavelength range of 7–8 mum//Technical Physics Letters, IET - 2017, Vol. 43, No. 7, pp. 666-669        

[86] Kozyreva O.А., Mikhailov A.K., Bougrov V.E. Odnoblyudov M.A., Egorov A.Y., Karachinsky L.Y. High-speed 1.3-1.55 um PIN photodetector based on InGaAs/InP heterostructure for microwave photonics//4 th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures “Saint Petersburg OPEN 2017”, BOOK of ABSTRACTS, IET - 2017, pp. 316-317    

[87] Kozyreva O.A., Solov’ev V.V., Polukhin I.S., Mikhailov A.K., Mikhailovskiy G.A., Odnoblyudov M.A., Gareev E.Z., Kolodeznyi E.S., Novikov I.I., Karachinsky L.Y., Egorov A.Y., Bougrov V.E. High-speed 1.3 -1.55 um InGaAs/InP PIN photodetector for microwave photonics//Journal of Physics: Conference Series, IET - 2017, Vol. 917, No. 5, pp. 052029    

[88] Kremleva A.V., Kirilenko D.A., Nikolaev V.I., Pechnikov A.I., Stepanov S.L., Odnoblyudov M.A., Bougrov V.E., Romanov A.E. Defects in thin epitaxial layers of (AlхGa1-х)2O3 grown on Al2O3 substrates//Физика и механика материалов = Materials Physics and Mechanics, IET - 2017, Vol. 32, No. 2, pp. 178-185    

[89] Kremleva A.V., Kirilenko D.A., Bougrov V.E., Romanov A.E., Nikolaev V.I., Odnoblyudov M.A. Extended defects in epitaxial layers of (AlxGa1-x)2O3 grown on sapphire substrates//29th International Conference on Defects in Semiconductors, IET - 2017, pp. ThP-76

[90] Shirshneva-Vaschenko E.V., Liashenko T.G., Shirshnev P.S., Bugrov V.E., Romanov A.E. Photoactive n-type oxide AZO-AgNP-AZO multilayer films for photovoltaic application//Journal of Physics: Conference Series, IET - 2018, Vol. 993, No. 1, pp. 012032    

[91] Shirshnev P.S., Romanov A.E., Bougrov V.E., Shirshneva-Vaschenko E.V., Snezhnaia Z.G. Potassium-alumina-boron glass doped with copper ions for solar cell down-convertors//Proceedings of SPIE, IET - 2018, Vol. 10688, pp. 106881D-1    

[92] Kotova E.I., Galina E. R., Tsyganok E.A., Odnoblyudov M.A., Bougrov V.E. Efficiency analysis of optical schemes for the development of high power laser diode modules//Proceedings of SPIE, IET - 2018, Vol. 10695, pp. 106950T        

[93] Buyalo M.S., Gadzhiyev I.M., Il'Inskaya N.D., Usikova A.A., Novikov I.I., Karachinsky L.Y., Kolodeznyi E.S., Bougrov V.E., Egorov A.Y., Portnoi E.L. Mode-Locked Lasers with “Thin” Quantum Wells in 1.55 mu m Spectral Range//Technical Physics Letters, IET - 2018, Vol. 44, No. 2, pp. 174-177    

[94] Pavlov N.V., Zegrya G.G., Zegrya A.G., Bugrov V.E. Intraband Radiation Absorption by Holes in InAsSb/AlSb and InGaAsP/InP Quantum Wells//Semiconductors, IET - 2018, Vol. 52, No. 2, pp. 195-208    

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